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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD243/A/B/C DESCRIPTION *With TO-220C package *Complement to type BD244/A/B/C APPLICATIONS *For medium power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER BD243 VCBO Collector-base voltage BD243A BD243B BD243C BD243 VCEO Collector-emitter voltage BD243A BD243B BD243C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE 45 60 80 100 45 60 80 100 5 6 10 2 65 150 -65~150 V A A A W V V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BD243/A/B/C CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BD243 Collector-emitter sustaining voltage BD243A IC=30mA; IB=0 BD243B BD243C VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage BD243/A ICEO Collector cut-off current BD243B/C BD243 BD243A ICES Collector cut-off current BD243B BD243C IEBO hFE-1 hFE-2 Emitter cut-off current DC current gain DC current gain VCE=80V; VBE=0 VCE=100V; VBE=0 VEB=5V; IC=0 IC=0.3A ; VCE=4V IC=3A ; VCE=4V 30 15 1 mA VCE=60V; IB=0 VCE=45V; VBE=0 VCE=60V; VBE=0 0.4 mA IC=6A;IB=1 A IC=6A ; VCE=4V VCE=30V; IB=0 0.7 mA 80 100 1.5 2.0 V V CONDITIONS MIN 45 60 V TYP. MAX UNIT SYMBOL VCEO(SUS) 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BD243/A/B/C Fig.2 Outline dimensions (unindicated tolerance:0.10 mm) 3 |
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